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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU931RPFI DESCRIPTION *High Voltage *DARLINGTON APPLICATIONS *High ruggedness electronic ignitions *High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VALUE 450 UNIT V Collector Current-peak Base Current w w scs .i w 400 5 15 30 1 5 60 150 -40~150 V V A .cn mi e A A A IBM PC Tj Tstg Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU931RPFI TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA B 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 VBE(sat)-1 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 1.8 V Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 ICES Base-Emitter Saturation Voltage Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE VECF DC Current Gain C-E Diode Forward Voltage w w. w .cn mi cse is IC= 10A; IB= 250mA VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125 VCE= 400V;IB= 0 VEB= 5V; IC= 0 IC= 5A; VCE= 10V IF= 10A 300 2.2 1.0 5.0 1.0 V mA mA 50 mA 2.8 V isc Websitewww.iscsemi.cn |
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